Initial growth state MoS_2 thin film by magnetron sputtering

摘要

MoS_2 thin films were grown on sapphire substrates by the MoS_2 target magnetron sputtering, using the DC mode in Ar atmosphere at the substrate temperature of 200 °C for 10, 20 and 30 sec. The results of AFM studies have shown that the morphology of MoS_2 thin films changes significantly with the increase of the process time. At the initial stage of growth, after 10 sec of deposition, a continuous film about 3.5 nm thick was observed.