Fabrication of Nanostructured Al-doped ZnO Thin Film for Methane Sensing Applications

摘要

CH_4 gas sensor was fabricated using spin-coating method of the nanostructured ZnO thin film. Effect of annealing temperature on the electrical and structural properties of the film was investigated. Dense nanostructured ZnO film are obtained at higher annealing temperature. The optimal condition of annealing temperature is 500°C which has conductivity and sensitivity value of 3.3 × 10~(-3) S/cm and 11.5%, respectively.