首页> 外文会议>Materials Research Society Symposium on Oxide Nanoelectronics and Multifunctional Dielectrics >Control of Volume Fraction of Non-180° Domains by Thermal Strain in Epitaxial Rhombohedral Pb(Zr, Ti)O_3 Thick Films
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Control of Volume Fraction of Non-180° Domains by Thermal Strain in Epitaxial Rhombohedral Pb(Zr, Ti)O_3 Thick Films

机译:随着外延菱体PB(Zr,Ti)O_3厚膜中的热应变对非180°结构域的体积分数控制

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Epitaxial rhombohedral Pb(Zr_(0.65)Ti_(0.35))O_3 films with (100) and (110)/(10-1) and (111)/(11-1) orientations were grown on various kinds of single crystal substrates having different thermal expansion coefficient. Volume fractions of (110) and (111) orientations in respective (110)/(10-1) and (111)/(11-1)-oriented films were almost linearly increased with increasing thermal strain, ε_(thermal), applied to the films that was generated under the cooling process after the deposition from the growth temperature to the Curie temperature. Observed saturation polarization (P_(sat)) was changed linearly with the volume fractions of (110) and (111) orientations, in the same manner as the volume fractions of (001) and (101) orientations in (001)/(100) and (101)/(110) oriented tetragonal Pb(Zr, Ti)O_3 films reported previously. These results showed that the volume fraction of the non-180° domains Pb(Zr, Ti)O_3 films of both tetragonal and rhombohedral symmetries can be manipulated by ε_(thermal), which brings possibly to control the P_(sat) value.
机译:外延rhombohedral Pb(Zr_(0.65)Ti_(0.35))O_3薄膜(100)和(110)/(10-1)和(111)/(11-1)取向在各种单晶基材上生长不同的热膨胀系数。随着热应变,ε_(热),施加的热应变,ε_(热),各自(110)/(10-1)和(111)/(111)和(111)/(11-1)膜的体积分数几乎线性地增加在从生长温度沉积到居里温度之后在冷却过程下产生的薄膜。观察到的饱和偏振(P_(饱和))与(110)和(111)取向的体积分数线性地改变,以与(001)的体积分数相同的方式(001)/(100)/(100 (101)/(110)以前报道的面向四字节Pb(Zr,Ti)O_3膜。这些结果表明,可以通过ε_(热)操纵四方和菱形对称的非-180°域Pb(Zr,Ti)O_3膜的体积分数,这可能引起P_(SAT)值。

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