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Investigation of Boron Nitride Prepared by Low Pressure Chemical Vapor Deposition at 650-1200 °C

机译:通过低压化学气相沉积在650-1200℃下进行氮化硼的研究

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BN coatings were deposited on carbon substrates by low-pressure chemical vapor depositionin a large temperature range of 650-1200 °C, employing BCl_3-NH_3-H_2 reaction system. The effects of depositing temperature on the yield, control step of deposition progress (deposition mechanism), microstructure, and crystallization degree of BN coating were investigated. Results show that BN deposition rate first increases and then decreases as the rising temperature and the maximum deposition rate occurs at 900-1000°C. By the determination of the Arrenius relationship, there are three temperature regions with different active energies and controlled by different deposition mechanisms, i.e. chemical reaction, mass transport and depletion of reactants. Through the surface morphology observation by scanning electron microscopy, chemical composition analyses by energy dispersion spectroscopy and crystallization degree and grain size comparison by Raman spectroscopy, it can be drawn that interphase-used BN is suitable to be deposited at 1000 °C.
机译:通过低压化学气相沉积在650-1200℃的大温度范围内,在650-1200℃,采用Bcl_3-NH_3-H_2反应系统,将BN涂层沉积在碳基材上。研究了沉积温度对产量,控制沉积进度(沉积机制),微观结构和结晶度的影响。结果表明,Bn沉积速率首先增加,然后随着上升温度而降低,并且最大沉积速率在900-1000℃下发生。通过确定Arrenius的关系,有三个具有不同活性能量的温度区域,并通过不同的沉积机制控制,即化学反应,大规模转运和反应物的耗尽。通过扫描电子显微镜的表面形态观察,化学成分通过能量分散光谱分析和结晶度和晶粒尺寸通过拉曼光谱比较,可以绘制间隔使用的BN适合于1000℃的沉积。

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