Development of nc-Si based intrinsic layer for HIT Solar Cells by Ion-beam Sputtering

摘要

In this paper the method of ion-beam sputtering was applied to produce nanocrystalline silicon (nc-Si) for emitter and intrinsic layers. Nanocrystalline silicon is more stable over time by reducing the degradation under the Staebler-Wronski effect than amorphous silicon. Reduction of surface recombination on the interface between "c-Si/nc-Si" was achieved by forming of nanocrystalline silicon via the ion-beam sputtering.