首页> 外文会议>応用物ç†å­¦ä¼šå­¦è¡“講演会;応用物ç†å­¦ä¼š >Fabrication of Pure-Perovskite-Phase Sm-Doped Pb(Mg_(1/3)Nb_(2/3))O_3-PbTiO_3 Epitaxial Thin Film on Si by Magnetron Sputter using Powder Target
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Fabrication of Pure-Perovskite-Phase Sm-Doped Pb(Mg_(1/3)Nb_(2/3))O_3-PbTiO_3 Epitaxial Thin Film on Si by Magnetron Sputter using Powder Target

机译:使用粉末靶通过磁控溅射在Si上制备纯钙钛矿相块掺杂的Pb(Mg_(1/3)Nb_(2/3))O_3-PBTIO_3外延薄膜

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The relaxor-based ferroelectric single crystal such as Pb(Mg_(1/3)Nb_(2/3))O_3-PbTiO_3 (PMN-PT) has attracted attention with a higher piezoelectricity beyond Pb(Zr,Ti)O_3 (PZT). Especially, Samarium-doped PMN-PT (Sm-PMN-PT) single crystal was recently reported to exhibit a world-leading high d_(33) value. This monocrystalline thin film with the pure-perovskite phase and ideal orientation is also expected to provide a giant piezoelectricity, and has a potential to create high-performance piezoelectric MEMS devices. However, the epitaxial growth of such a film with a thickness of a few micrometers for MEMS is generally uneasy due to the thermodynamics instability.
机译:基于松弛剂的铁电单晶如Pb(Mg_(1/3)Nb_(2/3))O_3-PBTIO_3(PMN-PT)引起了PB(Zr,Ti)O_3(PZT)的更高压电的注意力。特别是,最近据报道钐掺杂PMN-PT(SM-PMN-PT)单晶是展示世界领先的高D_(33)值。该具有纯Perovskite相和理想取向的单晶薄膜也预期提供巨大的压电性,并且具有产生高性能压电MEMS器件的潜力。然而,由于热力学不稳定性,这种具有厚度为几微米的这种薄膜的外延生长通常是不类要的。

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