The novel green luminescent material of the semiconductive nanoporous ZnMnO thin film was fabricated bygrain boundary engineering and thermal stress engineering via the thermal nucleation of the sputter-grown ZnMnOlayers. Nanoporous ZnMnO exhibited the strong green luminescence characteristics, attributing to the photonconfinement at the localized green-emission band formed near the edge area of ZnMnO nanopores. Usingsemiconductive nanoporous ZnMnO, two different types of high-performance solid-state lighting devices (i.e., fieldemission device and light-emitting diode) were demonstrated as tangible applications of semiconductive nanoporousZnMnO.
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