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Peculiar Enhancement of the Excitonic Emission of CdSe/ZnSe QuantumWells at~ 90 K when excited with a HeCd Laser

机译:用HECD激光激发时,在〜90 k时CDSE / ZnSe量子Quantumwells的激发器排放的特殊性

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The close coincidence at low temperatures of the HeCd blue laser line (442 nm,E_(laser)= 2.808 eV) with theZnSe bandgap, E_g= 2.821 eV, and with the excitonic emission at ~2.80 eV, allows the observation of peculiar effects during photoluminescence studies of CdSe/ZnSe quantum wells with a typical experimental setup. One effect is the enhancement of the excitonic emission at ~ 90 - 100 K; the second effect is the presence of strong longitudinal optical (LO) phonon lines (in a broad temperature range) due to resonant Raman scattering. Here, we will show that the enhancement of the excitonic emission, that can be misinterpreted as caused by an intrinsic temperature dependent behavior of the quantum wells, is due to the high absorption of the blue laser light by the barriers when the ZnSe bandgap coincides with E_(laser) at~ 90 K, electron and holes produced in the barriers diffuse to the quantum wells enhancing their excitonic emission.
机译:HECD蓝色激光线(442nm,E_(激光)= 2.808eV)低温下的紧密巧合,e_g = 2.821eV,伴有〜2.80eV的激动发射,允许观察特殊效应典型实验设置Cdse / ZnSe量子阱的光致发光研究。一项效果是提高〜90 - 100 k的激动激发发射;第二次效果是由于谐振拉曼散射而存在强大的纵向光学(LO)声子线(在宽温度范围内)。在这里,我们将表明,通过量子阱的内在温度依赖行为引起的兴趣发射的增强,这是由于当ZnSe带隙一致时,由于屏障的蓝色激光的高吸收E_(激光)在〜90 k,电子和屏障中产生的孔扩散到量子孔增强了它们的兴趣发射。

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