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Spherical Measuring Device of Secondary Electron Emission Coefficient Based on Pulsed Electron Beam

机译:基于脉冲电子束的二次电子发射系数的球面测量装置

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In order to improve the performance of the microchannel plate, a material having a high secondary electron emission coefficient (SEEC) is required, and the SEEC of this material needs to be accurately measured. For this purpose, a SEEC measuring device with spherical collector structure was designed. The device consists of vacuum system, electron gun, main chamber, sample stage, test system and test software. The measurement of the SEEC from a wide incident energy range (100 eV-10 keV) and a large incident angle (0°-85°) is realized by using the pulsed electron beam as the incident electron. The energy distribution of the secondary electrons is measured by a multi-layer grid structure. The SEEC of the metallic material was tested by using this device, which proves that the device is stable and good.
机译:为了提高微通道板的性能,需要具有高二次电子发射系数(SEEC)的材料,并且需要精确地测量该材料的SEEC。为此目的,设计了具有球形集电极结构的SEEC测量装置。该器件由真空系统,电子枪,主室,样品阶段,测试系统和测试软件组成。通过使用脉冲电子束作为入射电子来实现来自宽入射能量范围(100eV-10KeV)和大入射角(0°-85°)的SEEC的测量。二次电子的能量分布通过多层网格结构测量。通过使用该装置测试金属材料的SEEC,这证明了装置稳定且良好。

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