Memristors [1] are non-volatile memory elements with an electrically programmable resistance. Bipolar binary memristors have extensive promise in replacing FLASH as the next generation storage/memory medium. Conversely we focus here on bipolar analogue memristors (with a continuously variable resistance), which represent promising candidates for implementation as artificial synapses in hardware-based artificial neural networks towards realisation of power efficient and compact neuromorphic processors [2]. These have impactful applications in the design of autonomous cognitive agents [3] and deep-learning accelerators [4]. However progress in this field has been hindered by practical device issues.
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