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Annealing Time Influence on Optical Characteristic of beta-FeSi_2 Thin Film

机译:退火时间对β-Fesi_2薄膜光学特性的影响

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In this paper, we have prepared the beta-FeSi_2 thin film on Si substrate through the direct current magnetron sputtering technology. We have tested the samples by XRD, optical digital microscope (ODM), spectrophotometer, and SEM. Under the same annealing temperature at 1153 K, the annealing time has important influence on the optical characteristic of beta-FeSi_2 thin film. More the thickness of the beta-FeSi_2 thin film is thinner, and more the absorptivity of photo is higher. We should use the thinner beta-FeSi_2 thin film with appropriate value of the thickness and must adopt the anti-reflection layer to fabricate the solar cell.
机译:在本文中,我们通过直流磁控溅射技术制备了Si衬底上的β-Fesi_2薄膜。我们已经通过XRD,光学数字显微镜(ODM),分光光度计和SEM进行了测试。在1153K的同样退火温度下,退火时间对β-Fesi_2薄膜的光学特性具有重要影响。 β-Fesi_2薄膜的厚度较薄,照片的吸收率更高。我们应该使用较薄的β-Fesi_2薄膜,具有适当的厚度值,并且必须采用抗反射层来制造太阳能电池。

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