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A Novel PNIN Barrier Controlled Tunnel FET

机译:一种新型PNIN屏障控制隧道FET

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摘要

A novel structure of barrier controlled tunnel FET is proposed in the paper. The principles of gate work function engineering and channel doping engineering are combined to form up an in channel potential barrier, which can tune the source to drain tunnel current. The proposed structure serves as an alternative solution of barrier controlled tunnel FET fabrication, which combines the merits of the barrier controlled traditional MOSFET device and the bandgap controlled tunnel device. With carbon nanotube as the channel material, the device performance of the novel structure is verified using numerical simulation under the non-equilibrium Green's function framework.
机译:本文提出了一种新颖的屏障控制隧道FET结构。栅极工作函数工程和通道掺杂工程的原理组合以形成在通道潜在屏障中,可以调整源以排出隧道电流。所提出的结构用作障碍控制隧道FET制造的替代解决方案,其结合了屏障控制的传统MOSFET装置的优点和带隙控制的隧道装置。利用碳纳米管作为通道材料,使用非平衡绿色函数框架下的数值模拟来验证新结构的器件性能。

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