The new study based on a dual ion implantation PSD structure

摘要

In the analysis of semiconductor position sensitive detector (PSD) based on the traditional structure, using dual ion implantation method to studying the new type of PSD structure. The new structure of the n-type silicon substrate by implanting a high dose, low energy boron ions and another high energy boron ion, Which subsequent annealing of 2h at 1050 °C in an ambient of dry O_2 to form a shallow and a low doped p-n junction. Experimental results show that the new structure of PSD can obtained high position resolution, smaller errors and nonlinear response time.