EFFICIENT TM/TE POLARIZATION MODE TUNING IN p-AlGaAs/GaAsP/n-AlGaAs DIODE NANOSTRUCTURES BY UNIAXIAL COMPRESSION

摘要

Numerical calculations of the optical gain of TM and TE polarization modes in strained p-Al_xGa_(1-x)As/GaAs_(1-y)P_y/n-Al_xGa_(1-x)As double heterostructures of different quantum well widths (from 40 to 200 A) and phosphor contents (y = 0-0.20) were performed for different values of the external uniaxial compression along [110], [100] and [001] directions. The results of calculations demonstrate the possibility of the effective TM/TE tuning and switching by uniaxial compression along [100] and [110] directions in A~3B~5 zinc-blende light emitting diodes with "light hole up configuration" of quantized levels in a quantum well.