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Mn-doped PMN-PT thin films for electrocaloric applications

机译:用于电热应用的Mn掺杂PMN-PT薄膜

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In this work, lead magnesium niobate-lead titanate (1-x)Pb(MgNb)O-xPbTiO ((1-x)PMN-xPT) thin films with PT-fractions of 6.5 to 20% were fabricated on Pt(111)-coated Si wafers by multi-target reactive sputtering using four metallic targets (Pb, Mg, Nb, Ti). In order to increase the dielectric strength, co-doping with Mn was performed by co-sputtering of MnO targets. The electrocaloric temperature change ΔTEC was estimated using Maxwell's relation. Additionally, the EC coefficient ΔT/ΔE was evaluated by integrating the electric field dependence of the pyroelectric coefficient determined by a high-frequency laser intensity modulation method.
机译:在这项工作中,在PT(111)上制造具有6.5至20%的Pt-级分的铅镁铌酸铅钛酸铅(1-X)XPBTIO((1-X)PMN-XPT)薄膜(111)通过使用四种金属靶标(Pb,Mg,Nb,Ti)通过多目标反应溅射进行涂覆的Si晶片。为了提高介电强度,通过对MNO靶的共溅射进行与Mn的共掺杂。使用Maxwell的关系估计电热温度变化Δtec。另外,通过积分通过高频激光强度调制方法确定的热电量系数的电场依赖性来评估EC系数ΔT/ΔE。

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