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Mn-doped PMN-PT thin films for electrocaloric applications

机译:用于电热应用的锰掺杂PMN-PT薄膜

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In this work, lead magnesium niobate-lead titanate (1-x)Pb(MgNb)O-xPbTiO ((1-x)PMN-xPT) thin films with PT-fractions of 6.5 to 20% were fabricated on Pt(111)-coated Si wafers by multi-target reactive sputtering using four metallic targets (Pb, Mg, Nb, Ti). In order to increase the dielectric strength, co-doping with Mn was performed by co-sputtering of MnO targets. The electrocaloric temperature change ΔTEC was estimated using Maxwell's relation. Additionally, the EC coefficient ΔT/ΔE was evaluated by integrating the electric field dependence of the pyroelectric coefficient determined by a high-frequency laser intensity modulation method.
机译:在这项工作中,在Pt(111)上制备了PT分数为6.5%至20%的铌酸铅镁-钛酸铅(1-x)Pb(MgNb)O-xPbTiO((1-x)PMN-xPT)薄膜。通过使用四个金属靶(Pb,Mg,Nb,Ti)的多靶反应溅射法沉积的硅片。为了提高介电强度,通过共溅射MnO靶来进行与Mn的共掺杂。电热温度变化ΔTEC使用麦克斯韦关系来估计。另外,通过对通过高频激光强度调制方法确定的热电系数的电场依赖性进行积分来评估EC系数ΔT/ΔE。

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