Liquid Phase Growth of the Graphene using Ga_xNi_(1-x) System as Catalys

摘要

Deposition of few-layer graphene films on dielectric substrate by using a novel Ga_xNi_(1-x) flux LPG (Liquid Phase Growth) method is demonstrated. The graphene films shape themselves as circular thin films. The influence of the ingredients in the Ga_xNi_(1-x) system on the quality of synthesized graphene is discussed, graphene with better quality is synthesised when the Ga content is 50%. In addition, a growth mechanism is proposed. The graphene LPG is based on a two-step process. The first step is the formation of Ga_xNi_(1-x) flux and dissolution of carbon atoms during temperature elevation, the second process is the segregation of the carbon as graphene film from Ga-Ni flux during temperature dumping. We think that Ga_xNi_(1-x) system plays a catalytic role. Scanning electron microscope (SEM) and Raman Spectra are used for characterizing the experimental graphene films.