首页> 外文会议>International Conference on Manufacturing Technology and Electronics Applications >Density functional theory calculations of atomic hydrogen adsorption on (3, 3) single-wall carbon nanotubes with vacancy defects
【24h】

Density functional theory calculations of atomic hydrogen adsorption on (3, 3) single-wall carbon nanotubes with vacancy defects

机译:(3,3)单壁碳纳米管具有空位缺损的原子氢吸附的密度函数理论计算

获取原文

摘要

In this paper, we have employed density functional theory (DFT) to investigate the adsorption mechanisms of atomic hydrogens on the sidewalls of (3, 3) single-wall carbon nanotubes (CNTs) which have vacancy defects. All the calculations were performed using the generalized gradient approximation (GGA) with the Perdew, Burke and Ernzerhof (PBE) correlation functional. Our results show that hydrogen atoms can chemically adsorb on the defective nanotube. Bonding energy of per hydrogen atom decreases with the number of adsorbed hydrogen atoms. The hydrogen atoms will enhance the electrical conductivity of the (3, 3) nanotube. Besides one hydrogen atom adsorbing on the nanotube with a vacancy defect (MVD), hydrogen atoms move towards the MVD of the nanotube.
机译:在本文中,我们使用了密度泛函理论(DFT)来研究原子氢对(3,3)单壁碳纳米管(CNT)的侧壁上具有空位缺陷的吸附机制。使用具有钙,Burke和Ernzerhof(PBE)相关功能的广义梯度近似(GGA)进行所有计算。我们的结果表明,氢原子可以在缺陷的纳米管上化学吸附。氢原子的粘合能量随着吸附的氢原子的数量而降低。氢原子将增强(3,3)纳米管的电导率。除了具有空位缺陷(MVD)的纳米管上吸附的一个氢原子之外,氢原子朝向纳米管的MVD移动。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号