DIRECTED ENERGY TRANSFER THROUGH SIZE- GRADIENT NANOCRYSTAL LAYERS INTO SI SUBSTRATES

摘要

Nanostructured materials attract great interest as candidates for next generation of photoelectronic devices. Presently, the majority of hybrid devices are based on charge transfer in which exciton break- up occurs at the interface between dissimilar materials. Poor interface quality and carrier transport are issues that result in a conversion efficiencies lower than in the inorganic crystalline devices. An alternative approach is based on hybrid structures, which combine strongly absorbing components such as nanocrystal quantum dots (NQDs) and adjacent high-mobility semiconductor layers coupled via proximal energy transfer (ET).