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The Influence of Atmosphere on Electrical Transport Properties in Bilayer Graphene FET by CVD Methods

机译:CVD方法对双层石墨烯FET中电气运输性能的影响

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The desorption process for ambient atmosphere on electrical transport properties of bilayer graphene FET grown by CVD methods on SiCVSi substrate was investigated in room temperature. With increasing the vacuum time of the device underwent, we found that the voltage of Dirac point decreased, the mobility of hole (electron) increased and the charged impurity density decreased. The results suggest that the atmospheric adsorbates (mainly oxygen and water molecules) are strongly influence the electrical transport properties of graphene FET.
机译:通过CVD方法在SiCVSI基板上生长的双层石墨烯FET电气传输性能的环境气氛的解吸过程在室温下。随着器件的真空时间,我们发现DIAC点的电压降低,孔(电子)的迁移率增加,充电杂质密度降低。结果表明,大气吸附物(主要是氧气和水分子)强烈影响石墨烯FET的电气传输性能。

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