GRAPHENE TUNNELING TRANSIT-TIME DIODES: CONCEPT, CHARACTERISTICS, AND ULTIMATE PERFORMANCE

摘要

We consider a concept of graphene tunneling transit-time (GTUNNETT) diode, develop its device model, calculate the dc and ac characteristics, and evaluate the GTUNNETT ultimate performance. It is demonstrated that GTUNNETTs can exhibit negative dynamic conductivity in the terahertz (THz) range of frequencies. The GTUNNETs with the optimized structures (proper geometrical parameters and number of graphene layers) can be used in efficient THz oscillators.