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A Buffer Management for STT-MRAM based Hybrid Main Memory in Sensor Nodes

机译:传感器节点中基于STT-MRAM的混合主存储器的缓冲管理

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As the power dissipation has become one of the critical design challenges in a sensor network environment, nonvolatile memories such as STT-MRAM and flash memory will be used in the next generation sensor nodes. In this paper, we studied an efficient buffer management scheme considering the write limitation of STT-MRAM based main memory as well as the erase-before-write limitation of flash memory for storage device. The goal of proposed scheme is to minimize the number of write operations on STTMRAM as well as the number of erase operations on flash memory. We showed through simulation that proposed scheme outperforms legacy buffer management schemes.
机译:随着电力耗散已成为传感器网络环境中的关键设计挑战之一,在下一代传感器节点中将使用诸如STT-MRAM和闪存之类的非易失性存储器。在本文中,我们研究了一种高效的缓冲管理方案,考虑了基于STT-MRAM的主存储器的写入限制以及存储设备的闪存的擦除前的擦除前列限制。建议方案的目标是最大限度地减少STTMRAM上的写入操作的数量以及闪存上的擦除操作的数量。我们通过仿真显示,提出的方案优于传统缓冲管理方案。

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