Stimulated Brillouin Scattering in Semiconductors: Quantum Effects.

摘要

Present work is an attempt to find the influence of quantum effects on the Stimulated Brillouin Scattering in semiconductor plasmas using quantum hydrodynamic model. Third-order Brillouin susceptibility arising due to induced nonlinear current density in an n-type semiconductor crystal has been determined using coupled mode analysis. Effect of Bohm potential on the Brillouin gain coefficient is studied through the quantum corrections in classical hydrodynamic equations. It is found that the Bohm potential in the electron dynamics enhances the Brillouin gain. Reduction in the threshold pump intensity of the said process has been realized as a consequence of inclusion of quantum correction term.