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Bell states generation on a III-V semiconductor chip at room temperature

机译:在室温下III-V半导体芯片在III-V半导体芯片上产生

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In these last years, a great deal of effort has been devoted to the miniaturization of quantum information technology on semiconductor chips. In the context of photon pair sources, the bi-exciton cascade of a quantum dot [1] and the four-wave mixing in Silicon waveguides [2] have been used to demonstrate the generation of entangled states. Spontaneous parametric down-conversion in III-V semiconductor waveguides combines the advantages of room temperature and telecom wavelength operation, while keeping open the possibility of electrically pumping of the device [3].
机译:在过去几年中,大量努力已经致力于半导体芯片上量子信息技术的小型化。在光子对源的上下文中,量子点[1]的双激子级联和硅波导中的四波混合[2]已经用于展示缠结状态的产生。 III-V半导体波导中的自发参数下转换结合了室温和电信波长操作的优点,同时保持开放的电气泵送装置[3]。

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