ZnO Nanostructured Diodes: The Influence of Synthesis Conditions and p-type Material on Device Performance

摘要

We produce four distinct ZnO nanorod diode structures that are based on ZnO nanorods produced at pH 6 and pH 11 and have the p-type material PEDOT:PSS (hybrid device) or CuSCN (all inorganic device). After testing the performance of the diodes we show a rectification of 1050 at ±1V in the dark for the inorganic device. The device also exhibits good UV photodetection showing a rapid ca 0.1ms turn on and off to a source of illumination. The hybrid devices performed as previously reported with a rectification of 25 at ±1V in both dark and under illumination. We ascribe the performance of the devices to the differences in morphology in the ZnO brought about by the processing conditions and the way in which the p-type layer coats the nanostructure.