The Effect of Indium Composition on Open-Circuit Voltage of InGaN Thin-Film Solar Cell: An Analytical and Computer Simulation Study

摘要

In this work we have evaluated the open-circuit voltage developed across a metal/n-InGaN Schottky junction solar cells through both analytical and computer simulation as a function of varying indium composition. Our study includes four different systems such as Au/n-InGaN/Al, Pd/n-InGaN/Al, Ni/n-InGaN/Al and Pt/n-InGaN/Al with a variation of Indium composition. It is reported that there exists a certain value of Indium composition which decides the InGaN as a Schottky junction solar cell. This cut-off value of Indium is calculated for all the systems by analytical and simulated approach and a comparison is also made between them. The difference of 19.4% for Au, 18.91% for Pd, 20.50% for Ni and 15.15% for Pt between analytical and simulation is reported.