首页> 外文会议>Institute of Electrical and Electronics Engineers International Symposium on Applications of Ferroelectrics >Microstructure and dielectric properties of (Sr_(0.88)Bi_(0.08)) TiO_(3)-Bi(Mg_(1/2)Ti_(1/2))O_(3) ceramics
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Microstructure and dielectric properties of (Sr_(0.88)Bi_(0.08)) TiO_(3)-Bi(Mg_(1/2)Ti_(1/2))O_(3) ceramics

机译:(SR_(0.88)BI_(0.08))TiO_(3)-BI(MG_(1/2)TI_(1/2))O_(3)陶瓷的微观结构和介电性质

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In the present study, (1-x)(Sr_(0.88)Bi_(0.08))TiO_(3)-xBi(Mg_(0.5)Ti_(0.5))O_(3) (SBT-BMT) system was synthesized using conventional solid state processing. X-ray diffraction (XRD) and SEM testings were employed to determine the phase constitution and microstructure of ceramics. SBT-BMT ceramics exhibited moderate dielectric permittivities ((epsilon)_(r)) (>1100 at RT) and low dielectric loss (0.07percent) over the temperature range from -20 to 200 deg C, with flat temperature coefficients of permittivity. In addition, SBT-BMT ceramics were observed to possess dielectric relaxation characteristics and energy densities, being on the order of 1.4 J/cm~(3) at 180 kV/cm was observed for the 0.8S_(0.88)B_(0.08)T-0.2BMT ceramics.
机译:在本研究中,使用常规合成(1-x)(1-x)(SR_(0.88)Bi_(0.08))TiO_(3)-XBI(Mg_(0.5)Ti_(0.5))O_(3)(SBT-BMT)系统使用常规固态处理。采用X射线衍射(XRD)和SEM测试来确定陶瓷的相体积和微观结构。 SBT-BMT陶瓷在-20至200℃的温度范围内显示出适度的介电介质((ε))(> 1100时)(> 1100,在室温下),低介电损耗(0.0750.05),具有平坦的温度介电常数。此外,观察到SBT-BMT陶瓷具有介电弛豫特性和能量密度,对于0.8S_(0.88)B_(0.08)T(0.08)T.(0.08)T.(0.08)表示,观察到180kV / cm的1.4J / cm〜(3)。(0.08) -0.2bmt陶瓷。

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