The design of dual-band CMOS low noise amplifier for wireless applications

摘要

In this paper, a concurrent dual-band design of low noise amplifier, which could work with 3G-Exband 2.6GHz and WLAN 5.2GHz bands is presented using 0.18μm CMOS technology. The topology of the inductance degenerated cascode structure based on power-constrained simultaneous noise and input matching (PCSNIM) technique is presented. The simulated results of the circuit show that the optimized Noise Figure is about 0.65dB and 0.78dB, the input return loss S11 is about −20dB and −22dB, and power gain S21 is about 15dB and 9.5dB at the bands of 2.6GHz and 5.2GHz, respectively. The circuit dissipation of DC power is only 3.6mW under a supply 1.8V.