Low-temperature Deposition of a Polycrystalline Si Film on Yttria-Stabilized Zirconia Seed Layer

摘要

We have proposed a method to grow a polycrystalline silicon (poly-Si) film on quartz substrate at low-temperature (<450 °C) by using a polycrystalline yttria-stabilized zirconia (poly-YSZ) film as a seed layer. It was found out that the crystallizati on of the Si film strongly depended on the surface treatment of the YSZ seed layer. We obtained the crystallized Si film by direct deposition on the HF-treated YSZ layer rinsed with ethanol at a temperature as low as 400 °C, but that on the YSZ layer rinsed with deionized water (DIW) was amorphous.