Controlling Lateral Ordering of InGaAs Quantum Dots with Arsenic Background

摘要

We present in this work a method to control two-dimensional (2D) lateral ordering of In{sub}0.4Ga{sub}0.6As quantum dots (QDs) using the GaAs surface morphology and growth conditions. We have shown experimentally that the 2D ordering is due to the GaAs surface morphology. By setting the correct growth conditions, such as substrate temperature and Arsenic background, the 2D lateral ordering can be improved by the stacking of In{sub}0.4Ga{sub}0.6As QDs layers. Our results are consistent with reported in experimental and theoretical studies on surface structure and diffusion mechanism over GaAs surface.