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Connected Electrodes by the Growth of Germanium Dioxide Nanowires

机译:通过二氧化锗纳米线的生长连接电极

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Germanium dioxide nanowires have gained significant interest lately due to the bandgap of 2.44eV, and high index of refraction, n=l.63. In this paper we aim at investigating the lateral growth of high density metal-catalyzed germanium dioxide nanowires between electrodes. The gaps between two electrodes varied. The catalyst metal was placed on the electrodes, followed by a thermal annealing process, resulting in lateral growth of germanium dioxide whiskers with several microns length and eventually the formation of bridge-like nanostructures. These whiskers have certain unique properties, such as a high surface-to-volume ratio and the capability of connecting two electrodes. Because of these properties, the growth of whiskers from the electrodes has the potential to be developed as electronic devices such as nanosensors. These products are characterized by scanning electron microscopy (SEM), as well as X-Ray diffraction (XRD).
机译:由于2.44EV的带隙,二氧化锗纳米线最近获得了显着的兴趣,并且高折射率,n = L.63。本文旨在研究电极之间的高密度金属催化二氧化锗纳米线的横向生长。两个电极之间的间隙变化。将催化剂金属置于电极上,然后进行热退火工艺,导致二氧化锗晶须的横向生长,几微米长度,最终形成桥状纳米结构。这些晶须具有某些独特的性质,例如高度的高度比率和连接两个电极的能力。由于这些性质,来自电极的晶须的生长具有易于开发为诸如纳米调位器的电子设备。这些产品的特征在于扫描电子显微镜(SEM),以及X射线衍射(XRD)。

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