Anisotropic Lapping of Single Crystal Sapphire

摘要

Lapping processes of single crystal sapphire are investigated in relation to crystallographic orientation, the influence of the crystal anisotropism under different lapping liquid concentration, loading forces on materials removal rate and roughness in sapphire lapping is discussed. C-plane(0001), M-plane (1010), R-plane (1012), A-plane (1120) sapphire wafers were used for lapping experiments, experimental results show that Surface roughness is depend on the fracture toughness, surface orientation with higher fracture toughness such as C-plane would get better roughness during lapping, material removal rate of R-plane is the lowest in four planes, it is for elastic modulus and fracture toughness of R-plane are less than other three planes.