首页> 外文会议>Symposium on Nanoscale Phenomena in Functional Materials by Scanning Probe Microscopy >Study of Gold Thin Films Evaporated on Polyethylene Naphthalate Films toward the Fabrication of Quantum Cross Devices
【24h】

Study of Gold Thin Films Evaporated on Polyethylene Naphthalate Films toward the Fabrication of Quantum Cross Devices

机译:蒸发金薄膜在量子交叉装置制造中蒸发的金薄膜

获取原文

摘要

We have studied Au thin films evaporated on polyethylene naphtalate (PEN) organic substrates as a function of Au thickness < ~20 nm and discussed its feasibility toward metal/insulator hybrid materials used for quantum cross devices using atomic force microscope. The Au grain size increases from 28.0 ±4.6 nm to 48.5 ±11.4 nm with increasing the Au thickness from 6.9 to 20.8 nm and it denotes that the Au grain size is larger than its Au-thickness size, respectively. The surface roughness of Au films of sub-15-nm thickness, in the scanning scale of the Au-thickness size, is less than 0.9 nm, corresponding to 4-5 atomic layers. These experimental results indicate that Au thin films on PEN substrates are suitable for possible metal/insulator hybrid materials to be used in quantum cross devices.
机译:我们研究了在聚乙烯萘酸盐(笔)有机基材上蒸发的Au薄膜,作为Au厚度<〜20nm的函数,并讨论了使用原子力显微镜用于量子交叉装置的金属/绝缘体混合材料的可行性。 Au晶粒尺寸从28.0±4.6nm增加到48.5±11.4nm,随着6.9至20.8nm的增加,它表示Au粒度分别大于其Au厚度尺寸。亚15-nm厚度的Au膜的表面粗糙度,在Au厚度尺寸的扫描尺寸,小于0.9nm,对应于4-5原子层。这些实验结果表明,笔基板上的Au薄膜适用于在量子交叉装置中使用的金属/绝缘体混合材料。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号