Two Dimensional Modeling of Interdigitated Back Contact Silicon Heterojunction Solar Cells

摘要

Two-dimensional numerical simulations for interdigitated back contact silicon heterojunction (IBC-SHJ) solar cells have been studied with the software package Sentaurus Device. Distribution of trap states and thermionic emission were considered for amorphous-silicon material and amorphous-silicon/crystalline-silicon hetero-interface, respectively. The 2D distribution and current-voltage curve were generated. It was found that the performance of IBC-SHJ solar cell depends on the front surface recombination velocity and the dimensions of P, N contacts, which is also shown in simulated LBIC line scan. The simulations show that after optimization, an efficiency of 22% can be achieved for IBC-SHJ solar cells.