Simple but effective passivation process for the mirror facets of high-power semiconductor diode lasers

机译：高功率半导体二极管激光器镜面的简单但有效的钝化过程

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A novel passivation process for the facets of diode lasers has been developed. Ridge waveguide lasers emitting at 808 nm and being aged at 400 mW output power show degradation rates below 1×10{sup}(-5) h{sup}(-1).

机译：已经开发了二极管激光器小平面的新型钝化过程。脊波导激光器在808nm发射并在400 mW输出功率下老化，显示出低于1×10 {sup}（ - 5）h {sup}（ - 1）的降解率。

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《Conference on Lser and Electro-Optics Europe》|2003年||共1页
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P. Ressel; G. Erbert; G. Beister; G. Trankle;
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专利

1. Novel Passivation Process for the Mirror Facets of Al-Free Active-Region High-Power Semiconductor Diode Lasers [J] . Peter Ressel, Gotz Erbert, Ute Zeimer, IEEE Photonics Technology Letters . 2005,第5期

机译：无铝有源区高功率半导体二极管激光器镜面的新型钝化工艺
2. High-power 880-nm diode-directly-pumped passively mode-locked Nd:YVO_(4) laser at 1342 nm with a semiconductor saturable absorber mirror [J] . Fang-Qin Li, Ke Liu, Lin Han, Optics Letters . 2011,第8期

机译：具有半导体可饱和吸收镜的1342 nm高功率880 nm二极管直接泵浦无源锁模Nd：YVO_（4）激光器
3. Facet-passivation processes for the improvement of Al-containing semiconductor laser diodes [J] . Lambert R.W., Ayling T., Hendry A.F., Journal of Lightwave Technology . 2006,第2期

机译：用于改善含铝半导体激光二极管的端面钝化工艺
4. Simple but effective passivation process for the mirror facets of high-power semiconductor diode lasers [C] . Ressel, P., Erbert, . 2003

机译：简单但有效的高功率半导体二极管激光器镜面钝化工艺
5. Passivation studies of aluminum gallium arsenide materials for high-power laser diode development. [D] . Edirishinghe, Champika Hideo. 1997

机译：用于大功率激光二极管开发的砷化铝镓材料的钝化研究。
6. A Preliminary In Vitro Study on the Efficacy of High-Power Photodynamic Therapy (HLLT): Comparison between Pulsed Diode Lasers and Superpulsed Diode Lasers and Impact of Hydrogen Peroxide with Controlled Stabilization [O] . Gianluigi Caccianiga, Marco Baldoni, Carlo Angelo Ghisalberti, 2006

机译：高功率光动力疗法（HLLT）功效的体外初步研究：脉冲二极管激光器和超脉冲二极管激光器之间的比较以及过氧化氢的受控稳定作用
7. Direct measurement of facet temperature up to melting point and COD in high-power 980-nm semiconductor diode lasers [O] . Sweeney, Stephen, Lyons, LJ, Adams, Alfred, 2003

机译：在大功率980 nm半导体二极管激光器中直接测量刻面温度，直至熔点和COD
8. Diode Lasers with Cylindrical Mirror Facets and Reduced Beam Divergence [R] . Walpole, J. N., Liau, Z. L., Missaggia, L. J., 1987

机译：具有圆柱形镜面和减少光束发散的二极管激光器

Simple but effective passivation process for the mirror facets of high-power semiconductor diode lasers

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