METHOD FOR PASSIVATION OF ETCHING MIRROR FACET OF SEMICONDUCTOR LASER

摘要

PURPOSE: To provide a method for passivation of an etching mirror facet of a semiconductor laser diode for improving the reliability of a device. CONSTITUTION: An etching mirror facet is first processed in a wet-etching process, and a natural oxide and a surface layer which is mechanically damaged during a prior mirror etching process are substantially removed, giving a desired improvement. Then a passivation pretreatment is performed to remove residual surface oxide, and a sub-single layer in which nonradioactive recombination of minority carries in the mirror facet is permanently decreased is formed. Lastly, to avoid the effects of environment on a mirror, a pretreated mirror surface is covered with a passivation layer.