首页> 外文会议>Conference on Advances in Patterning Materials and Processes XXXVI >Mitigation of Line Edge Roughness and Line Width Roughness in Block Copolymer Directed Self-Assembly through Polymer Composition and Molecular Weight Manipulation
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Mitigation of Line Edge Roughness and Line Width Roughness in Block Copolymer Directed Self-Assembly through Polymer Composition and Molecular Weight Manipulation

机译:通过聚合物组合物和分子量操纵阻止嵌段共聚物定向自组装中的线边缘粗糙度和线宽粗糙度的减缓

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The semiconductor community is well aware of the challenges that exist in developing lithographic methodsthat can pattern features at sub-20 nm periodic feature spacing (pitch, L_0). Optical lithography already utilizescomplex multiple patterning schemes to overcome diffraction limitations at 193-nm exposure wavelengths, andthe delayed insertion of EUV lithography will likely require the use of multiple patterning or other assistiveprocesses to further reduce the achievable feature sizes. An alternative to these techniques employs the directedself-assembly (DSA) of block copolymers. Block copolymers (BCPs) can naturally micro-phase separate intomorphologies such as lamellae, cylinders, spheres, and gyroids at length scales down to sub-10 nm dimensions.Using the ability of BCPs to micro-phase separate in conjunction with alignment methods such as graphoepitaxyand chemoepitaxy to produce well-ordered structures, a process referred to as DSA, offers a possible methodfor producing sub-20 nm features in conjunction with optical patterning processes at greatly reduced cost andcomplexity. One of the many challenges in implementing line-space type DSA processes is the lack of methods foreffective modulation and tuning of the pattern pitch (L_0) produced by a given BCP. Previous studies have shownthat blending homopolymer into the BCP thin films can allow for tuning of both: (1) L_0 to be larger than thatprovided naturally by the BCP's molecular weight (MW) and (2) the relative size line-space size ratio. However,this tuning ability comes at the expense of increased line edge roughness (LER) and line width roughness (LWR).It has also been shown that either higher or lower MW BCP can be blended into a primary BCP in order tomodulate and tune the pattern pitch produced from the BCP mixture, but the effects of this BCP blending onpattern LER and LWR have not been explored or reported in detail. In this study, coarse-grained moleculardynamics simulations of BCP DSA on a chemoepitaxial underlayer were implemented to characterize the impactsthat blending controlled amounts of two different MW BCPs together have on DSA pattern LER and LWR. Theblends shown here had LER and LWR values as much as 20% higher than those of pure, monodisperse BCPs;however, reducing the MW difference between the 2 BCPs could reduce this effect.
机译:半导体界非常了解开发光刻方法中存在的挑战这可以在Sub-20 nm周期性特征间距(间距,L_0)上的模式。光学光刻已经利用复杂多图案化方案以克服193-nm曝光波长的衍射限制,以及EUV光刻的延迟插入可能需要使用多个图案化或其他辅助进一步减少可实现的特征尺寸的过程。这些技术的替代方案采用了指示的嵌段共聚物的自组装(DSA)。嵌段共聚物(BCP)可以自然微相分开诸如薄片,圆柱体,球体和长度的胶质组织等形态缩小到亚10 nm尺寸。使用BCP与微相单独的能力结合与变形方法(如Graphoepitaxy)分开和化疗以产生良好订购良好的结构,该过程称为DSA,提供了一种可能的方法用于制造亚20nm特征,与光学图案化过程一起大大降低成本复杂。实施线路空间类型DSA流程的许多挑战之一是缺乏方法通过给定BCP产生的图案间距(L_0)的有效调制和调整。以前的研究表明将均聚物混合到BCP薄膜中可以允许调谐:(1)L_0大于那个通过BCP的分子量(MW)和(2)相对尺寸线空间尺寸比,自然提供。然而,这种调谐能力以增加的线边粗糙度(LER)和线宽粗糙度(LWR)为代价。还显示出可以将更高或更低的MW BCP融入主BCP以便调制和调谐从BCP混合物产生的图案间距,但这种BCP混合的效果图案LER和LWR尚未详细探索或报告。在这项研究中,粗粒分子实施了Chechoepitaxial底层的BCP DSA的动态模拟,以表征影响将两个不同MW BCP的混合控制量在DSA图案LER和LWR上具有。这这里显示的混合物具有比纯,单分散BCP更高的LER和LWR值高达20%;然而,减少2bcps之间的MW差异可以减少这种效果。

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