首页> 外文会议>Conference on Wide Bandgap Materials, Devices, and Applications >ELECTRONIC STRUCTURE AND OPTICAL PROPERTIES OF Mg AND Al DOPED ZnO USING (TB-mBJ) MODIFIED BECKE JOHNSON POTENTIAL STUDY
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ELECTRONIC STRUCTURE AND OPTICAL PROPERTIES OF Mg AND Al DOPED ZnO USING (TB-mBJ) MODIFIED BECKE JOHNSON POTENTIAL STUDY

机译:Mg和Al掺杂ZnO的电子结构和光学性质使用(TB-MBJ)改进的Becke Johnson潜在研究

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The electronic structure and ground state properties of SC16-ZnO, Zn_7Mg_1O_8 and Zn_7Al_1O_8 were studied usingWien2k code. The doping effect of magnesium and aluminium on band structure of Zinc Oxide reveals that the profilesare identical, however slightly shifted due to band broadening. Using super cell approach the electronic and opticalproperties are also studied for Zn_7Al_1O_8 and Zn_7Mg_1O_8. The calculated parameters like onset of critical point or thresholdvalue, fundamental band gap and dielectric functions are reported for SC16-ZnO, Zn_7Mg_1O_8 and Zn_7Al_1O_8.
机译:使用SC16-ZnO,Zn_7mg_1O_8和Zn_7Al_1O_8的电子结构和地状态特性进行了研究Wien2k代码。镁和铝对氧化锌带结构的掺杂效应显示曲线然而,由于带扩展,相同,然而略微移位。使用超级电池接近电子和光学还针对Zn_7Al_1O_8和Zn_7mg_1O_8研究了属性。计算出的参数,如临界点或阈值报告了SC16-ZNO,Zn_7mg_1O_8和Zn_7Al_1O_8的值,基波带隙和介质功能。

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