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Synthesis and characterization of SiC and CNT doped MgB2 superconducting wire

机译:SiC和CNT掺杂MGB2超导线的合成与表征

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Silica nanoparticles and carbon nanotubes-doped magnesium diboride (MgB2) superconducting wires have been successfully prepared via powder-in-tube (PIT) method. In this work, pure MgB2 was doped using various dopants concentrations at 1 and 2 wt.% of each silica nanoparticles (SiC) and carbon nanotubes (CNT). The mix was sintered at 800°C for 3 hours before putting it in a 6 mm diameter stainless steel tube wire and drawn to get 3 mm diameter of stainless-steel wire. The materials were characterized using X-ray diffraction (XRD) for phase and structural analysis and scanning electron microscope (SEM) for surface morphology. Further, superconductivity characteristic of the wires was examined through a transition temperature using a cryogenic magnet. Structural characterization examined using X-ray diffraction showed that no other impurities of other phases were detected. Microstructural investigation using electron microscope showed even distribution of the particles with inherent porosities. Measurement at cryogenic temperature showed that pure MgB2 and 2 wt.% CNT doped MgB2 showed superconductivity characteristic after being sintered whereas others showed unique resistivity behaviors. After deformation by drawing process to form wires, all of the samples showed a superconducting behavior, however, the presence of SiC and CNT decreased the critical temperature, Tc, of MgB2. Although the samples doped with CNT decrease the Tc, CNT doped samples showed higher Tc than that of MgB2/SiC wires.
机译:通过粉末 - 管(凹坑)方法成功地制备了二氧化硅纳米粒子和碳纳米管掺杂的二硼化镁(MGB2)超导线。在这项工作中,使用在1和2重量%的各种掺杂剂浓度下掺杂纯MgB2。每种二氧化硅纳米颗粒(SiC)和碳纳米管(CNT)的各种掺杂剂浓度。将混合物在800℃下烧结3小时,然后将其放入6毫米的不锈钢管线中并拉伸以获得3毫米的不锈钢线。使用X射线衍射(XRD)的材料表征用于相位和结构分析和扫描电子显微镜(SEM),用于表面形态。此外,通过使用低温磁体通过过渡温度检查导线的超导特性。使用X射线衍射检查的结构表征显示,未检测到其他相差的其他杂质。使用电子显微镜的微观结构调查显示出具有固有孔隙率的颗粒的分布。低温温度的测量显示纯MgB2和2重量%。%CNT掺杂的MGB2显示出烧结后的超导特性,而其他CNT在烧结后显示出独特的电阻率行为。通过拉伸过程变形以形成导线后,所有样品显示出超导行为,然而,SiC和CNT的存在降低了MGB2的临界温度Tc。虽然掺杂有CNT的样品降低TC,但CNT掺杂样品显示出比MGB2 / SiC线的CNT较高的TC。

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