Finite-time Stability Analysis of Closed-loop Gate Drive for Silicon Carbide MOSFETs Switching Transient Modification

摘要

Since the classical stability cannot deal with the behavior of closed-loop silicon carbide (SiC) MOSFET gate drive during switching transients, a finite-time stability analysis method is proposed and demonstrated. First, a small-signal SiC MOSFET model including the nonlinearity of parameters is employed to derivation the state equations of the drive circuit. Then a determination procedure of nonlinear parameters is illustrated. Finally, the behavior of the drive circuit during switching transients is evaluated using Davari’s method. Different circuit designs are analyzed using the proposed method and analysis results are confirmed by experiments.