Fabrication of Uniformly Growing Graphene Films via the Dip-coating Method

摘要

The graphene (GE) films were fabricated in this paper through the deposition of graphene oxide (GO) sheets onto the quartz slide by means of dip-coating technique, followed by thermal annealing. The growth process and transmittance of the film were monitored by ultraviolet and visible spectrophotometer (UV-Vis), the surface morphology and structure were investigated by Atomic force microscopy (AFM), Scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and Raman. The sheet resistance of the film was also tested and results showed that the sheet resistance is about 60 KΩr~(-1) and the transmittance is as high as 81 % (at 550 nm).