Single-Event Characterization of Xilinx UltraScale+? MPSOC under Standard and Ultra-High Energy Heavy-Ion Irradiation

摘要

Heavy-Ion irradiation of a Xilinx Ultrascale+ MPSOC was performed to measure Single-Event-Latch-up and Single-Event-Upset Cross-Sections. Additionally, irradiation with a ultra high energy xenon beam shows similar upset sensitivity.