Single-Event Characterization of 16 nm FinFET Xilinx UltraScale+ Devices with Heavy Ion and Neutron Irradiation

摘要

This study examines the single-event response of Xilinx 16nm FinFET UltraScale+ FPGA and MPSoC device families. Heavy-ion single-event latch-up, single-event upsets in configuration SRAM, BlockRAM? memories, and flip-flops, and neutron-induced single-event latch-up results are provided.