In0.53 Ga 0.47 As Triangular GAA MOSFETs

摘要

Triangular GAA MOSFETs (gate-all-around metal oxide semiconductor) with III-V material in channel has been simulated by Atlas Tcad-Silvaco software, we has used for obtain DC, AC characteristics analysis. Those devices provide superior electrostatic control of channel, A different performance (gm, DIBL, I_ON/I_OFF) with 14 nm channel length viewing the impunity to short channel effects with 3D advanced structure that we got gm=178 ms/mm at V_DS =0.25V, a reasonable ratio I_ON/I_OFF of 5.1 * 10^{4, sub-threshold sweep (SS) equal to 135 mV/dec, DIBL =40 mV/V drain induced barrier lowering (DIBL) and finally a cut-off frequency of f_C=800 GHz, the III-V GAA MOSFETs structures has provided a achievable path around optimal scaling of this devices.}