EMI simulation of GaN power stage for audio class D amplifiers

摘要

Half-bridge GaN EPC9062 100V/20A development board has been investigated. Conductive electromagnetic interferences (EMI) are simulated in the range up to 30 MHz with the use of the built-in Multisim SPICE library components. As a result, a distinction has been observed between simulated and experimental data in the low-frequency band. The reason for the difference is that the simulation model produces significant spikes of drain currents at the time of transistors turning on, which is not observed in reality. After completing the simulation model, experimental results and simulated ones are well matched.