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Advances in thermal laser separation: process monitoring in a kerf-free laser-based cutting technology to ensure high yield

机译:热激光分离的进展:在基于角酸激光的切割技术中进行过程监测,以确保高产

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Thermal Laser Separation (TLS) is an ablation free and therefore kerf free laser based cutting technology. This novel dicing technology is utilized to separate microelectronic devices on semiconductor wafers. In order to broaden the use of TLS method towards smaller chips and new materials on the one side and towards an advanced process monitoring on the other side, a novel contact-free measuring method for monitoring the TLS process has been developed. This new method is based on heating the semiconductor wafer with a near-infrared (NIR) laser and analyzing the subsequent temperature gradients induced by heat diffusion with contact-less temperature measurement. Thus, the TLS-crack can be detected due to its isolating effect to heat flux. The feasibility of the method is presented and the influence of parameters like sample size, distance to the TLS-crack and the laser setup in the measurements is reported.
机译:热激光分离(TLS)是无烧蚀的基于干基激光的切割技术。这种新颖的切割技术用于将微导器件分离在半导体晶片上的微电子器件。为了扩大TLS方法对较小的芯片和新材料的一侧和对另一侧的先进过程监测,已经开发了一种用于监测TLS过程的新型接触测量方法。该新方法基于将半导体晶片加热与近红外(NIR)激光器,并通过与较少的温度测量进行热扩散引起的随后温度梯度。因此,可以由于其与热通量的隔离效果而检测到TLS裂缝。报道了该方法的可行性,并报道了样品大小,与TLS裂纹的距离和测量中的激光设置的影响。

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