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Pushing the Boundaries of High Power Lasers: Low Loss, Large Area CVD Diamond

机译:推动大功率激光器的边界:低损耗,大面积CVD钻石

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Synthetic CVD diamond has exceptional properties, including broad spectral transmission, physical and chemical robustness, and the highest thermal conductivity of any known material, making diamond an attractive material for medium to high power optical and laser applications, minimising the detrimental effects of thermal lensing and radiation damage. Example applications include ATR prisms, Raman laser crystals, extra- and intra-cavity laser cooling. In each case the demands on the fundamental material properties and fabrication routes are slightly different. In recent years,there has been good progress in the development of low-loss, single crystal diamond, suitable for higher power densities,higher pulse rates and more demanding intra- and extra-cavity thermal management. The adoption of single crystal diamond in this area has however, been hindered by the availability of large area, low birefringence plates. To address this, we report a combination of CVD growth and processing methods that have enabled the manufacture of large, low defect substrates. A final homoepitaxial, low absorption synthesis stage has produced plates with large area (up to 16 mm edge length), low absorption(a<0.005 cm-1 at 1064 nm), and low birefringence(An <10~(-5)), suitable for double-sided intra-cavity cooling. We demonstrate the practical advances in synthesis, including increasing the size while reducing in-use losses compared to previous generations of single crystal material, and practical developments in processing and implementation of the single crystal diamond parts, optimising them for use in a state-of-the-art femtosecond pulsed Ti:Sa thin disk gain module, all made in collaboration with the wider European FP7 funded Ti:Sa TD consortium.
机译:合成CVD金刚石具有出色的性质,包括广谱传输,物理和化学鲁棒性,以及任何已知材料的最高导热率,使钻石成为高功率光学和激光应用的钻石,最大限度地减少了热镜头的不利影响辐射损坏。示例应用包括ATR PRISMS,拉曼激光晶体,腔内和腔内激光冷却。在每种情况下,对基本材料特性和制造路线对基础材料的需求略有不同。近年来,在低损耗,单晶钻石的开发方面取得了良好的进展,适用于更高的功率密度,更高的脉搏率和更苛刻的内腔热管理。然而,在该区域中采用单晶金刚石,通过大面积,低双折射板的可用性受到阻碍。为了解决此问题,我们报告了CVD生长和加工方法的组合,该方法使得能够制造大型低缺陷基板。最终的同性端,低吸收合成阶段具有大面积(高达16mm边缘长度)的板,低吸收(1064nm处<0.005cm-1),以及低双折射(<10〜(-5)) ,适用于双面腔内冷却。我们展示了合成的实际进步,包括增加尺寸,同时减少了与前几代单晶材料相比减少了使用损失,以及单晶钻石件的加工和实施中的实际开发,优化它们用于状态 - 艺术Femtosecond脉冲Ti:SA薄磁盘增益模块,全部与更广泛的欧洲FP7资助TI:SA TD联盟进行合作。

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