Implementation of operational amplifier for the designing of novel piezoresistive pressure sensor

摘要

This work describes an idea of implementing operational amplifier for the designing of smart miniaturized piezoresistive pressure sensor for various applications. Boron doped p-type and phosphorus doped n-type piezoresistors are used as the sensing layers in order to detect the resistance change under an externally applied uniform pressure. A non-inverting operational amplifier (op-amp) has been used as the read-out circuitry of this novel piezoresistive pressure sensor which converts the resistance change in to the output voltage signal that is proportional to the input applied pressure. Intellisuite MEMS software is utilized for simulation of pressure sensor. Finite element method based Thermo-electro-mechanical (TEM) and Synple module is employed for structural and electrical analysis of the piezoresistive pressure sensor. The simulation result of this op-amp based piezoresistive pressure sensor using p-type piezoresistors has a sensitivity of approximately 156 mV/MPa whereas a sensitivity of 870 mV/MPa has been observed in case of using n-type piezoresistors.