It is very important to consider the range distribution and transverse distribution of ions implanted into semiconductor materials in design and fabrication of semiconductor integration devices by ion implantation. The Nd (neodymium) ions with energy of 400 keV and dose of 2×10~(15) ions/cm~2 were implanted into SOI (Silicon-on-insulator) samples at room temperature under the angles of 0°, 30° and 45°, respectively. The transverse distribution of 400 keV Nd ions implanted in SOI samples were measured by Rutherford backscattering technique. The measured results are compared with Monte Carlo code SRIM2012 predictions. It can be found that the experiment values were in good agreement with the prediction of SRM2012 code.
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