Simulation of GaSb:Te crystal growth in space experiment

摘要

An application of X-ray topography methods allowed us to construct a two-dimensional map of the impurity distribution in a GaSb:Te crystal grown under microgravity conditions. This map served as a framework for the analysis of crystal growth features and of the impurity inhomogeneity in the crystal. The data on the impurity distribution in the sample became an experimental basis for the analysis of the crystallization parameters (the crystal growth rate and the maximum convection velocity) and an adequate application of theoretical models (analytical and numerical) to explaining the mechanisms of onset of impurity inhomogeneities in the crystal.